Post by Department of Computer Science & Engineering, SKIT Jaipur

The Department of Computer Science & Engineering, SKIT Jaipur, proudly congratulates Dr. Abdul Naim Khan on the publication of his research paper titled: “Selective 10 nm Doping of Si, Se, S, and Sn in β-Ga₂O₃ Channel for Enhanced Linearity and Activation Energy in nano-AlN/β-Ga₂O₃ MOSHEMT” Published in the prestigious Arabian Journal for Science and Engineering, the research presents a comprehensive investigation into advanced semiconductor device engineering, focusing on selective doping techniques to enhance the performance, linearity, and efficiency of next-generation MOSHEMT devices. The study contributes significantly to the fields of Semiconductor Technology, Nanoelectronics, Power Electronics, and RF Device Engineering, offering valuable insights for the development of high-performance electronic systems. #SKITJaipur #CSEDepartment #ResearchPublication #Springer #SemiconductorTechnology #Nanoelectronics #PowerElectronics #RFEngineering #ResearchExcellence #Innovation #AcademicAchievement #FacultyAchievement SKIT Jaipur Rajasthan Technical University (RTU), Kota Jaipal Meel