Post by SemiVision

Samsung Electronics has been actively developing its 300mm silicon photonics platform in recent years to address the surging demand for data center interconnects driven by AI and HPC computing. First unveiled at OFC 2026, the company’s 300mm silicon photonics platform is built on a mature CMOS process and incorporates features such as a 305 nm silicon layer, a 400 nm silicon nitride layer, PN-doped modulators, germanium waveguide photodiodes, thermo-optic phase shifters, TSVs, and bump packaging. The platform delivers low-loss silicon/SiN waveguides and broadband coupling efficiency, high-speed microring and MZM modulators exceeding 50 GHz, as well as high-speed and avalanche photodetectors operating at 50 GHz and 20 GHz. Its accompanying PDK supports more than 40 component models, provides full DRC/LVS/PEX verification, and takes into account factors such as free-carrier absorption and self-heating effects, improving consistency between simulation results and actual wafer performance. https://lnkd.in/duKAN4nN