Post by QuantumDiamonds

𝗦𝗲𝗺𝗶𝗰𝗼𝗻𝗱𝘂𝗰𝘁𝗼𝗿 𝗗𝗶𝗴𝗲𝘀𝘁 𝗰𝗼𝘃𝗲𝗿𝗮𝗴𝗲 𝗼𝗳 𝗼𝘂𝗿 𝗳𝘂𝗻𝗱𝗮𝗺𝗲𝗻𝘁𝗮𝗹𝗹𝘆 𝗻𝗲𝘄 𝗮𝗽𝗽𝗿𝗼𝗮𝗰𝗵 𝘁𝗼 𝗺𝗲𝘁𝗿𝗼𝗹𝗼𝗴𝘆 In the most recent issue of Semiconductor Digest, our CTO Fleming Bruckmaier lays out how QDM can close the inspection gap in advanced packaging. The starting point: in CoWoS-L, EMIB, and HBM stacks, failure localization breaks down. 𝗟𝗼𝗰𝗸-𝗶𝗻 𝘁𝗵𝗲𝗿𝗺𝗼𝗴𝗿𝗮𝗽𝗵𝘆 𝗹𝗼𝘀𝗲𝘀 𝗿𝗲𝘀𝗼𝗹𝘂𝘁𝗶𝗼𝗻 to thermal diffusion through stacked dies and goes blind to low-resistance defects that produce no temperature rise. X-ray CT resolves geometry beautifully but cannot tell electrically open from electrically closed: voids in TSVs, leakage paths, and high-ohmic shorts between microbumps leave no structural signature. 𝗤𝗗𝗠 𝗶𝘀 𝗮 𝗱𝗶𝗳𝗳𝗲𝗿𝗲𝗻𝘁 𝗽𝗵𝘆𝘀𝗶𝗰𝗮𝗹 𝗮𝗽𝗽𝗿𝗼𝗮𝗰𝗵. NV centers in diamond, optically initialized at 532 nm and read out via the Zeeman shift around 2.87 GHz, recover a full Bx, By, Bz map at micrometer resolution and picotesla-per-root-hertz sensitivity. Biot-Savart inversion reconstructs 3D current density beneath the sensor. No prior tool has delivered this combination: non-destructive, depth-resolved, electrically-sourced, in a commercial system. The physical advantage: a magnetic field exists wherever current flows, regardless of dissipation. A marginally resistive TSV that passes the continuity test is invisible to LIT, but produces a clear signature in a magnetic current map. Here, our 𝗤𝗗𝗠 𝗶𝗺𝗮𝗴𝗲𝘀 𝗰𝘂𝗿𝗿𝗲𝗻𝘁 𝗳𝗹𝗼𝘄 𝗶𝗻 𝗻𝗼𝗺𝗶𝗻𝗮𝗹𝗹𝘆 𝗳𝘂𝗻𝗰𝘁𝗶𝗼𝗻𝗮𝗹 𝗰𝗼𝗻𝗱𝘂𝗰𝘁𝗼𝗿𝘀, not just hot spots. Full article is open access, link in the comments. Reach out to us for the deeper physics walkthrough or to discuss your failure analysis workflow.