Post by Nexperia

The rapid growth of AI infrastructure is placing new demands on power conversion systems, requiring higher efficiency, increased power density and improved thermal performance. To help address these challenges, Nexperia has expanded its 650 V GaN FET portfolio with new 35 mΩ, 50 mΩ and 70 mΩ devices available in TO-247-3, TO-247-4, TOLL and TOLT package options. Designed for applications including AI datacenter power supplies, telecom infrastructure, renewable energy systems, BESS and industrial automation, the devices provide engineers with greater flexibility to optimize next-generation high-power architectures. Learn more: https://lnkd.in/eg-NWuva