Post by Lam Research

Name: At advanced DRAM nodes, even nanometer-scale variation in mandrel width or spacer thickness can casc
Uploaded: 2026-07-14T17:26:21.436Z
Channel: Lam Research
Description: At advanced DRAM nodes, even nanometer-scale variation in mandrel width or spacer thickness can cascade into pitch walk, and combined with line-edge roughness, it can trigger a line-bridge defect that

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At advanced DRAM nodes, even nanometer-scale variation in mandrel width or spacer thickness can cascade into pitch walk, and combined with line-edge roughness, it can trigger a line-bridge defect that shorts the device. Our Semiverse® Solutions team used Monte Carlo virtual fabrication in SEMulator3D® to map these compounding interactions across Self-Aligned Quadruple Patterning (SAQP) — defining a more robust process window before a single wafer hits the chamber. See how virtual fabrication helps engineers better understand and control process complexity: https://bit.ly/4fabxIQ

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