Post by imec

Press release - As AI workloads drive rapid growth in memory demand, conventional memory technologies such as DRAM and SRAM are becoming increasingly difficult to scale. At the 2026 IEEE/JSAP symposium on VLSI Technology & Circuits, imec presents two advances in ferroelectric memory. One focuses on ferroelectric capacitors (FeCAP), enabling low‑voltage operation while maintaining strong polarization and endurance. The other demonstrates vertically stacked ferroelectric transistors (FeFET), pointing toward compact, high‑density memory architectures. These approaches highlight how ferroelectric materials could help address key bottlenecks in future memory systems, from improving energy efficiency to enabling new 3D integration schemes. Expanding the design space beyond traditional approaches will be essential to sustain AI performance. Read the full press release: https://lnkd.in/eigpkBqN