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𝗦𝗰𝗢𝗲𝗻𝗰𝗲 π—‘π—²π˜„π˜€: π—˜π—±π—Άπ˜π—Όπ—Ώβ€™π˜€ 𝗣𝗢𝗰𝗸 π˜€π˜π˜‚π—±π˜† π—½π˜‚π—―π—Ήπ—Άπ˜€π—΅π—²π—± 𝗢𝗻 𝗔𝗽𝗽𝗹𝗢𝗲𝗱 π—£π—΅π˜†π˜€π—Άπ—°π˜€ π—Ÿπ—²π˜π˜π—²π—Ώπ˜€ A German–Israeli research team led by Dr. Andreas Furchner has demonstrated how imaging ellipsometry enables non-destructive characterisation and quality control of microstructured MXene thin films during device fabrication. The authors used two complementary ellipsometry approaches for precise, multi-scale access to key material properties. The work positions imaging ellipsometry as a powerful platform for monitoring thin-film uniformity, device integrity, and functionality throughout processing, including critical lithographic steps.

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