Post by Fraunhofer Institute for Photonic Microsystems IPMS

🏢 𝗔𝗱𝘃𝗮𝗻𝗰𝗶𝗻𝗴 𝗡𝗲𝘅𝘁-𝗚𝗲𝗻𝗲𝗿𝗮𝘁𝗶𝗼𝗻 𝗡𝗼𝗻-𝗩𝗼𝗹𝗮𝘁𝗶𝗹𝗲 𝗠𝗲𝗺𝗼𝗿𝘆 𝗔𝗿𝗰𝗵𝗶𝘁𝗲𝗰𝘁𝘂𝗿𝗲𝘀 𝗳𝗼𝗿 𝗘𝗱𝗴𝗲 𝗔𝗜 𝗮𝗻𝗱 𝗜𝗻𝗱𝘂𝘀𝘁𝗿𝗶𝗮𝗹 𝗔𝗽𝗽𝗹𝗶𝗰𝗮𝘁𝗶𝗼𝗻𝘀 As conventional memory scaling reaches its physical and thermal limits, Fraunhofer IPMS is driving the development of emerging non-volatile memory (NVM) technologies. Our research focuses on integrating novel materials into CMOS-compatible workflows to enable efficient in-memory computing architectures. ⚡ 𝗙𝗲𝗿𝗿𝗼𝗲𝗹𝗲𝗰𝘁𝗿𝗶𝗰 𝗠𝗲𝗺𝗼𝗿𝘆 (𝗙𝗥𝗔𝗠 / 𝗙𝗲𝗙𝗘𝗧): Utilizing hafnium oxide-based layers for purely electrostatic, low-power operation. Key milestones include a 22-nm FDX® chip tape-out with GlobalFoundries, joint development on sub-3nm nanosheet components with Taiwanese research institute, and a 300 mm wafer-exchange pilot line with CEA-Leti. 🧲 𝗠𝗮𝗴𝗻𝗲𝘁𝗶𝗰 𝗠𝗲𝗺𝗼𝗿𝘆 (𝗠𝗥𝗔𝗠): Storing information via spintronic effects to provide high endurance and volatile-SRAM caching speeds. Current R&D includes scaling stacks on 300 mm wafers and exploring chiral crystal materials in partnership with the Max Planck Society - Institute for Chemical Physics of Solids to optimize charge-to-spin conversion. 💾 𝗥𝗲𝘀𝗶𝘀𝘁𝗶𝘃𝗲 𝗠𝗲𝗺𝗼𝗿𝘆 (𝗥𝗥𝗔𝗠): Leveraging voltage-controlled resistance changes for ultra-dense, non-volatile storage architectures. This technology is positioned to bridge the gap between RAM and mass storage as Storage-Class Memory. Fraunhofer IPMS provides the complete pipeline—from material characterization to industrial-scale 300 mm pilot-line integration. 🌐 For further insights into our R&D services, visit our website: https://lnkd.in/dKbFh_FQ with: Maximilian Lederer, Konrad  Seidel, Wenke Weinreich, Benjamin Lilienthal-Uhlig #SemiconductorTechnology #Microelectronics #MemoryArchitectures #InMemoryComputing #FraunhoferIPMS #IndustrialRAndD