Post by CEA-Leti

[SCIENCE] 🧠⚡CEA-Leti pushes the boundaries of embedded memory. At the VLSI Symposium 2026, CEA-Leti is unveiling a major breakthrough in embedded memory technology: the successful demonstration of 22nm Ferroelectric RAM (FeRAM) based on an innovative 3D capacitor architecture. https://lnkd.in/eK3W35ze By vertically integrating hafnium-zirconium oxide (HZO) ferroelectric capacitors, our researchers have achieved: ✅ Memory cells 2.5× smaller than conventional SRAM at the same node. ✅ SRAM-like density while retaining the key advantage of non-volatility. ✅ Low-voltage operation, opening new possibilities for ultra-low-power Edge AI. This advance removes one of the longstanding barriers preventing FeRAM from competing with volatile memories, paving the way for more compact, energy-efficient systems for: 🔹 Edge AI 🔹 High-performance computing 🔹 IoT platforms 🔹 Aerospace & defense applications Beyond performance, local data processing enabled by dense embedded non-volatile memory can significantly reduce energy consumption associated with cloud computing, an important step toward more sustainable digital infrastructures. This milestone, presented in the paper "Engineering 3D HZO Ferroelectric Capacitors to Scale Down 22nm Embedded FeRAM," also demonstrates a clear roadmap toward even higher memory densities for future generations of intelligent devices. 🚀 The future of embedded AI starts with smarter memory. Simon MARTIN | Laurent Grenouillet | Caroline Coutier | Gael Pillonnet | Jahan Carine | Francois Andrieu | Madjid Hihi | FAMES Pilot Line | IEEE Symposium on VLSI Technology and Circuits