Post by ZEISS Microscopy

What’s behind ZEISS Crossbeam 750’s low-kV resolution? It’s the lens! 🔍⚙️ In advanced FIB-SEM workflows, SEM imaging resolution at low voltage has a direct impact on the precise control of FIB processes. Crossbeam 750 enhances resolution and signal-to-noise ratio where it matters most. It becomes apparent in the image: The Crossbeam 750 low-kV tomography slice (right) compares favorably to the TEM reference image of the same sample structure (left). This performance is driven by targeted design improvements of the electron optical column. What does this mean in practice? More reliable and easier low-kV imaging when surface sensitivity, contrast, and fine details are critical. A question microscopists often ask is whether these design changes affect the flexibility required for demanding FIB-SEM workflows. This is mainly because the working distance used for FIB processing has become slightly smaller. However, the actual sample positioning geometry relative to the chamber, SEM, and FIB columns remains unchanged. This means that the full adaptability required for FIB-SEM workflows is preserved. Crossbeam 750 maintains its high SEM imaging performance across all working points, while offering full flexibility for sample shape, tilt angle, voltage, and typical application requirements. 👉 Questions about how column design shapes low-kV performance? Put it in the comments. #ElectronMicroscopy #FIBSEM #Crossbeam750