Post by Beneq

As GaN power devices continue to advance, surface passivation remains a critical challenge for device performance. Yesterday at GaN Marathon 2026, Raoul Joly from Beneq presented findings from our joint research with imec. The results show that PEALD AlN deposited at lower plasma power delivers the best channel resistance of ~600 Ω/sq while maintaining reliability in p-GaN HEMT devices. Missed the session or would like to discuss further? Stop by and meet team Beneq at Booth #1. Gaël DeCock Lie Luo Raoul Joly #GaNMarathon #ALDep #GaN #PowerDevices #Semiconductors