Post by ASM

Beyond Moore’s Law: ALD Powers Vertical Innovation The semiconductor is facing a paradigm shift. As traditional 2D scaling approaches physical limits, the future of performance is moving upward: vertical innovation. In our latest blog we explore how Atomic Layer Deposition (ALD) has transitioned from and advanced engineering tool to the primary enabler of the 3D architecture revolution. 🔑 Highlights shared by our VP, Julien Arcamone: · ALD is essential for next‑gen devices: high‑k gate oxides, gate‑all‑around transistors, EUV underlayers, and 3D‑NAND gap‑fill. · Our TENZA ALD technology achieves gap‑fill in structures with aspect ratios >100:1, already adopted in multiple 3D‑NAND applications. · Innovative reactor designs enable deposition of complex multi‑element materials, advancing selective ALD and future device architectures. · Materials leadership: Vertical scaling isn’t just about geometry; it’s about chemistry. ALD unlocks novel materials that minimize leakage and maximize energy efficiency. 👉 Read the full article: https://lnkd.in/gMxPgzr8