Post by Applied Materials

The surge in AI compute is accelerating the industry’s transition to advanced 3D device architectures, including gate-all-around (GAA) transistors and high-layer-count 3D NAND. To address this emerging challenge, we're introducing two new chipmaking systems designed to achieve precision processing in increasingly deep and narrow 3D structures. Together, the new Centris™ Spectral™ SiN ALD* and Producer™ Selectra™ Mo Etch provide chipmakers with precise control over both dielectric film deposition and metal removal in high-aspect-ratio structures. The result is more uniform materials engineering at advanced nodes, enabling continued 3D scaling with better device performance, tighter process control and improved manufacturability across logic and memory applications. Learn More: https://bit.ly/4xvZo9o