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šŸ“¢ š— š—œš—§ š—Ÿš—¶š—»š—°š—¼š—¹š—» š—Ÿš—®š—Æš—¼š—æš—®š˜š—¼š—æš˜† š—¶š—»š˜ƒš—²š˜€š˜š˜€ š—¶š—» š˜š˜„š—¼ š—”š—œš—«š—§š—„š—¢š—” š—›š˜†š—½š—²š—æš—¶š—¼š—» šŸÆšŸ¬šŸ¬ š—ŗš—ŗ š˜€š˜†š˜€š˜š—²š—ŗš˜€ š˜š—¼ š—®š—±š˜ƒš—®š—»š—°š—² š—šš—®š—” š—®š—»š—± šŸ®š—— š—ŗš—®š˜š—²š—æš—¶š—®š—¹š˜€ š—æš—²š˜€š—²š—®š—æš—°š—µ AIXTRON SE announces that the š— š—®š˜€š˜€š—®š—°š—µš˜‚š˜€š—²š˜š˜š˜€ š—œš—»š˜€š˜š—¶š˜š˜‚š˜š—² š—¼š—³ š—§š—²š—°š—µš—»š—¼š—¹š—¼š—“š˜† (š— š—œš—§) š—Ÿš—¶š—»š—°š—¼š—¹š—» š—Ÿš—®š—Æš—¼š—æš—®š˜š—¼š—æš˜† has š—½š˜‚š—æš—°š—µš—®š˜€š—²š—± š˜š˜„š—¼ š—›š˜†š—½š—²š—æš—¶š—¼š—» šŸÆšŸ¬šŸ¬ š—ŗš—ŗ š˜€š˜†š˜€š˜š—²š—ŗš˜€ to support research in gallium nitride (GaN) power electronics, RF devices, and next-generation two-dimensional (2D) materials. The systems will be configured primarily for 200 mm processing, while maintaining full capability up to 300 mm – enabling scalability across multiple wafer sizes. One system will focus on GaN power and RF device development, while the second will be dedicated to 2D materials research, including next-generation transistors and remote epitaxy. Learn more about it here: šŸ‘‰ https://lnkd.in/eYbw2C_F #AIXTRON #PressRelease #MIT

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