Post by AIXTRON SE
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š¢ š šš§ šš¶š»š°š¼š¹š» šš®šÆš¼šæš®šš¼šæš š¶š»šš²ššš š¶š» ššš¼ ššš«š§š„š¢š” ššš½š²šæš¶š¼š» šÆš¬š¬ šŗšŗ ššššš²šŗš šš¼ š®š±šš®š»š°š² šš®š” š®š»š± š®š šŗš®šš²šæš¶š®š¹š šæš²šš²š®šæš°šµ AIXTRON SE announces that the š š®ššš®š°šµššš²ššš šš»ššš¶šššš² š¼š³ š§š²š°šµš»š¼š¹š¼š“š (š šš§) šš¶š»š°š¼š¹š» šš®šÆš¼šæš®šš¼šæš has š½ššæš°šµš®šš²š± ššš¼ ššš½š²šæš¶š¼š» šÆš¬š¬ šŗšŗ ššššš²šŗš to support research in gallium nitride (GaN) power electronics, RF devices, and next-generation two-dimensional (2D) materials. The systems will be configured primarily for 200 mm processing, while maintaining full capability up to 300 mm ā enabling scalability across multiple wafer sizes. One system will focus on GaN power and RF device development, while the second will be dedicated to 2D materials research, including next-generation transistors and remote epitaxy. Learn more about it here: š https://lnkd.in/eYbw2C_F #AIXTRON #PressRelease #MIT