Dongguan, Guangdong, China
MOCVD, MBE, HRXRD, synchrotron-based HRXRD
In-situ analysis of heteroepitaxial and homoepitaxial growth of gallium oxide by synchrotron-based XRD and RHEED at BESSY II. Nano-diffraction of InGaN/GaN core-shell nano-rods at ESRF and PETRA III.
MOCVD (Aixtron) growth of planar GaN for LEDs; thin film analytics with SEM, AFM, XRD and PL; sapphire substrate structuring with lithography and RIE.