United States
Accomplished semiconductor process integration leader with extensive experience in RF and power device development. Skilled in optimizing manufacturing processes, improving yield, and leading cross-site engineering teams. Demonstrates strong expertise in technology transfer, process control, and module integration. Known for strategic thinking, operational excellence, and fostering collaboration across multiple disciplines to drive innovation and high-performance results.
Led FEOL and BEOL integration development for RF and power technologies across 180–40 nm nodes. Improved fab performance through defect reduction and process control programs that support yield stability. Managed engineering teams across multiple U.S. sites and coordinated collaboration among PI, process, and module groups. Oversaw technology transfer and requalification activities for new process platforms.
Led development of etch and CVD process modules for 130–90 nm MOSFET platforms. Reduced parametric variation across multi-lot production through chamber matching and recipe tuning. Collaborated with device and integration teams to support volume ramps and process window optimization.
Owned PVD/CVD thin-film module development, improving layer uniformity by roughly 5 percent. Shortened cycle time through recipe improvements and tool-level optimization. Partnered with module and integration groups to support yield-limiting root-cause investigations.
Conducted DOE studies to optimize memory cell stack structures. Performed parametric and electrical failure analysis to support high-volume production. Collaborated with cross-functional manufacturing teams on process window control.
Supported thin-film and etch module operations in early-stage process development. Executed characterization tests and documented process steps to improve repeatability.