Thomas Waechtler

About

Specialties: Microelectronics, Power Semiconductor Devices, IGBT, Metallization, Interconnects, Atomic Layer Deposition, ALD, Advanced Materials, Materials Analysis Methods, Analytics, R&D, Project Management, Industrial Research and Development, Public Funded Research and Development Projects

Experience

• Infineon Technologies (11 yrs 6 mos)
  • Director Technology Development IGBT
    Oct 2020 - Present · 5 yrs 9 mos

  • Technology Development Power Semiconductors
    Jan 2015 - Present · 11 yrs 6 mos

    Technology Development for IGBTs

• Fraunhofer ENAS (11 yrs)
  • Research Associate / Wissenschaftlicher Mitarbeiter
    Jul 2009 - Dec 2014 · 5 yrs 6 mos

    Working fields: - Metallization systems for microelectronic devices - Atomic Layer Deposition (ALD) of metal thin films, especially copper - Metal-organic chemical vapor deposition (MOCVD) of copper - Materials analysis and characterization methods (SEM, FIB, EDX, Spectroscopic Ellipsometry) Further fields of interest: - High-frequency devices - Integrated optics - Photonic crystals - Advanced materials

  • Researcher
    2004 - 2012 · 8 yrs

    Group Leader Nanomaterials and Analytics

• Visiting Scholar at Fudan University
  Apr 2009 - Jun 2009 · 3 mos

• Wissenschaftlicher Mitarbeiter at Chemnitz University of Technology - Center for Microtechnologies
  Sep 2004 - Jun 2009 · 4 yrs 10 mos

  Working fields: - Metallization systems for microelectronic devices - Metal-organic chemical vapor deposition (MOCVD) of copper - Atomic Layer Deposition (ALD) of metal thin films, especially copper - Materials analysis methods Further fields of interest: - High-frequency devices - Integrated optics - Photonic crystals - Advanced materials

• Research Intern at Bell Laboratories
  Oct 2002 - Jul 2003 · 10 mos

  Contributing to the work of Michael J. Manfra and Nils G. Weimann on the field of GaN-based HEMTs