Tim Boettcher

Senior Principal Development Engineer / System Architect SiC MOSFETs

Hamburg, Hamburg, Germany

About

Experienced semiconductor device engineer with a rich track record in industrial research and development. System Architect with main focus Rectifier development (small signal, power, glass, Si, SiC, Schottky, SiGe, Trench, PN) and also MOSFET / BJT design. Package design and development (leaded axial, leadless, leaded, medium power and power) including thermomechanic design and simulation. Electrical product testing on high-speed testers and datasheet creation. Strong background in materials science and semiconductor physics, in combination with good simulation skills (Sentaurus TCAD and Tsuprem / Medici). Product robustness and reliability testing (AEC-Q101, customer-specific profiles, failure models) with related failure analysis techniques and root cause determination methods (8D, Shanin, FMEA). Introduction and release of external manufacturing, including audits and external development. Project planning and risk management (FMEA moderation, SCIO, PRCR), and project lead of industrial as well as EU funding projects. Transfer from development to volume production, volume ramp-up. 12 granted patent families, 17 patent families pending, 70 published papers.

Experience

  • Nexperia (Full-time · 9 yrs 6 mos)
    • Senior Principal Development Engineer and System Architect SiC MOSFETs
      Sep 2024 - Present · 1 yr 10 mos

    • Senior Principal Development Engineer and Lead Architect Rectifier
      2021 - Present · 5 yrs 6 mos

    • Senior Principal Development Engineer
      2017 - Present · 9 yrs 6 mos

  • NXP Semiconductors (Hamburg, Deutschland · On-site)
    • Principal Development Engineer
      2012 - 2017 · 5 yrs

    • Senior Development Engineer
      2007 - 2012 · 5 yrs

  • Development Engineer at Philips Semiconductors
    2004 - 2007 · 3 yrs

  • Research Assistant at Universität Bremen
    2002 - 2004 · 2 yrs

    GaN Laser Diode Development and Epitaxy