Steven Grijseels

Staff Engineer R&D Industrialization New Process Technology

Lappersdorf, Bavaria, Germany

About

I am an enthusiastic, skillful and competence driven physical research engineer with a PhD degree in Photonics and Semiconductor Physics. I have great affinity with optics, photonic semiconductor devices, and metamaterials. Therefore, I pursue a career in semiconductor nanotechnology and photonic integration. My ambition is to find solutions to complex problems, and to become a successful scientific engineer in the field of photonics and optoelectronics. In my work, I like to be closely related to the people whom I work with, providing mutual opportunities and stimulating discussions. I have good communication skills and I hold a sharp eye for detail. In my personal life, I like to cycle and run, or play golf. Else, I am enjoying time with two sons, listening to music, or reading a book.

Experience

  • ams OSRAM ()
    • Staff Engineer R&D Industrialization in New Process Technology
      Nov 2024 - Present · 1 yr 9 mos

    • Staff Engineer R&D Industrialization in Process Integration
      Sep 2023 - Present · 2 yrs 11 mos

    • Development Engineer R&D OP Epitaxy Industrialization
      Jan 2022 - Aug 2023 · 1 yr 8 mos

  • SMART Photonics (5 yrs 1 mo)
    • PDK Engineer
      Mar 2021 - Jan 2022 · 11 mos

      Responsibility over the Process Design Kit of the main InP photonics integration technology.

    • Research And Development Engineer
      Jan 2017 - Jan 2022 · 5 yrs 1 mo

      SMART Photonics is the world's first pure-play foundry for Indium Phosphide photonics semiconductors.

  • Doctoral Candidate at Eindhoven University of Technology
    Nov 2010 - Jun 2016 · 5 yrs 8 mos

    Miniaturization of electrical integrated circuits on a chip nowadays is reaching a fundamental physical limit. Moreover, the ever growing demand for faster (and secured) data communication has led to an exponential growth in our power energy consumption. Both problems can be overcome by utilizing optical communication, where photons are being used as information carriers. Telecommunication in this case is done with the aid of optical fibers, which are low-power consuming and have tremendous capacity of transporting information. However, integration of optoelectronic components on a chip is seriously hampered by the diffraction limit, which states that localization of electromagnetic waves into nanoscale regions much smaller than the wavelength of light is prohibited. A solution is provided by the application of plasmonic-guided modes, which bridges between photonics and nano- electronics. In my research we have attempted to control the polarization and emission rate of light that is confined in small semiconductor nanostructures, which are dubbed quantum dots (QDs). A QD can be considered as an artificial atom, which means that the energy levels are discrete. The system of our choice is InAs QDs embedded in a GaAs barrier matrix. An atempt was made to control the electron spin orientation within a vertically multiple stacked QD array, i.e., a Quantum Post, by means of an electric field across the post. Tasks involved optical characterization, and g-factor calculations of the nanostructure devices. The second goal was to investigate the incorporation of aluminum to the GaAs barrier, which leads to deep confinement of charge carriers, mimicking isolation from the surrounding environment, and providing luminescent capabilities up to room temperature. The final goal was related to the establishment of radiative coupling between single InAs QDs and localized plasmons located at the surface of metallic nanoparticles.

  • Master Project at TU/e Eindhoven University of Technology
    Sep 2009 - Aug 2010 · 1 yr

    On the road to implement ferromagnetic functionalities in semiconductors, GaMnAs has been widely studied as a model to understand and control the ferromagnetic properties of dilute magnetic semiconductors. Although recent advances in epitaxial growth have shown that a Curie temperature of 185 K for GaMnAs can be reached, the potential applications in industry still remain uncertain because this is still far below room temperature. Incorporating metallic ferromagnetic nanoclusters of MnAs in a semiconductor host would provide a solution to this problem. Such nanostructured materials can have a Curie temperature well above room temperature and still profit from the optoelectronic properties of the semiconductor host. Incorporating metallic ferromagnetic nanoclusters of MnAs in a semiconductor host would provide a solution to this problem. Such nanostructured materials can have a Curie temperature well above room temperature and still profit from the optoelectronic properties of the semiconductor host. Extensive improvements and test measurements are been performed at room temperature, 77 K, and 4.2 K, both with atomic force and magnetic force microscopy techniques. The MFM resolution and sensitivity have been investigated on hard disk drive samples and bit patterned media. Magnetic semiconductor nanostructures (Ga,Mn)As were also investigated at various temperatures using a superconducting quantum interference device (SQUID).

  • Application developer at Vanboxtel
    May 2007 - Aug 2009 · 2 yrs 4 mos

    Development of logistic solutions for warehouse management systems. Activities involved guidance and support of implementations, providing courses and traineeships, acquisition, maintaining public relations, and optimization of logistic operations and consultation.