Bath, England, United Kingdom
Wafer fab strategy Chip technology development
Head of R&D and Process Engineering on IXYS' high power devices: ppIGBTs - phase control and fast Thyristors - GTOs / GCTs - Rectifier and fast Diodes
Head of process engineering in power device wafer fab for small and medium power thyristors and diodes. Integration of high power device processing (thyristors, diodes, GTOs) incl. fab extension and modernisation. Project leads on Power Schottky diodes, light triggered thyristors, compound semiconductor devices.
Development of GaAs power semiconductor devices and production processes in cooperation with FBH, Berlin. Planning and preparation of production line. Development project on SiC power devices in cooperation with European research institute.
Plasma etching and deposition, CVD, sputtering in IGBT and Schottky diode processing. Planar passivated power thyristors and diodes.