Heverlee, Flemish Region, Belgium
Specialties: silicon technology, materials, thin films, annealings, strained silicon, integration, 2D
MIDA (TF) R&D department. International R&D academic and industrial projects. Present research: 2D materials, dielectrics and metals for 2D; Thin Films for logic and patterning. Research expériences: strained silicon and the mechanics of small objects, dopant and hydrogen diffusion, thermal stability of materials, thermal budgets and advanced anneal. Technology background: process & materials up to design rules and DTCO, including integration and device, for CMOSFET, Flash and PCM technologies.
Building high-performance thin-film transistors for advanced logic and memory applications require alternative channel material to silicon. We develop and study: -2D semiconductor channels (WS2, MoS2) and the associated HK dielectrics and contact materials to build sub 10nm gate length transistors. -Semiconductor metal oxides (IGZO and derivatives) for ultra-low leakage devices. -Gate and contact metals for advanced Si technology
MIDA (TF) R&D department. R&D academic and industrial projects. Present research: 2D materials and the surrounding dielectrics and metals.
Silicon Technology Development group - Two main activities: Development of materials for advanced embedded memories - Implementation and deployment of process integration software in the R&D group (SEMulator3D - Coventor).
IBM Alliance in Albany NY, ST assignee - 10, 7 nm FinFET and UTBB FDSOI technologies: physics of advanced junctions and strained SiGe Fin and SOI channels - material studies and Multiphysics modelling - design of macros and test structures.
Silicon Technology Development group - CMOSFETs and embedded Flash technologies. Development and integration of new processes, material studies for thin films, implantation and annealing, strained silicon, advanced characterisation. PhD students mentoring, management of research collaborative projects with universities and institutions.
-10nm and 7nm FinFET R7D In charge of the Unit Process test structure bucket for advanced reticles. SiGe Fin, development of Multiphysics models (strained silicon, diffusion, transport...). -10nm FDSOI, In charge of the team developing advanced strained silicon technologies
development engineer in cathode ray tubes for TV Project leader Process: electron optics, high voltage, vacuum