Kawasaki-ku, Kanagawa, Japan
ISSCC 2019 : "A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology" N. Shibata1, K. Kanda1, T. Shimizu1, J. Nakai1, O. Nagao1, N. Kobayashi1, M. Miakashi1, Y. Nagadomi1, T. Nakano1, T. Kawabe1, T. Shibuya1, M. Sako1, K. Yanagidaira1, T. Hashimoto1, H. Date 1, M. Sato1, T. Nakagawa1, H. Takamoto1, J. Musha1, T. Minamoto1, M. Uda1, D. Nakamura1, K. Sakurai1, T. Yamashita1, J. Zhou1, R. Tachibana1, T. Takagiwa1, T. Sugimoto1, M. Ogawa1, Y. Ochi1, K. Kawaguchi1, M. Kojima1, T. Ogawa1, T. Hashiguchi1, R. Fukuda1, M. Masuda1, K. Kawakami1, T. Someya1, Y. Kajitani1, Y. Matsumoto1, N. Morozumi1, J. Sato1, N. Raghunathan2, Y. L. Koh2, S.Chen2, J. Lee2, H. Nasu2, H. Sugawara2, K. Hosono1, T. Hisada1, T. Kaneko1, H. Nakamura1 1Toshiba Memory, Yokohama, Japan; 2Western Digital, Milpitas, CA
ISSCC 2018 : "A 5Gb b/Cell Flash Memory on a 96-Word-Line-Layer Technology" Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Naohito Morozumi, Ryo Fukuda, Yuui Shimizu, Toshifumi Hashimoto, Xu Li, Yuuki Shimizu, Kenichi Abe, Tadashi Yasufuku, Takatoshi Minamoto, Hiroshi Yoshihara, Takahiro Yamashita, Kazuhiko Satou, Takahiro Sugimoto, Fumihiro Kono, Mitsuhiro Abe, Tomoharu Hashiguchi, Masatsugu Kojima, Yasuhiro Suematsu, Takahiro Shimizu, Akihiro Imamoto, Naoki Kobayashi, Makoto Miakashi, Kouichirou Yamaguchi, Sanad Bushnaq, Hicham Haibi, Masatsugu Ogawa, Yusuke Ochi, Kenro Kubota, Taichi Wakui, Dong He, Weihan Wang, Hiroe Minagawa, Tomoko Nishiuchi, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Koh, Feng Lu, Venky Ramachandra, Srinivas Rajendra, Steve Choi, Keyur Payak, Namas Raghunathan, Spiros Georgakis, Hiroshi Sugawara, Seungpil Lee, Takuya Futatsuyama, Koji Hosono, Noboru Shibata, Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura ISSCC 2015 : 7.1 "A low-power 64Gb MLC NAND-flash memory in 15nm CMOS technology." Mario Sako, Yoshihisa Watanabe, Takao Nakajima, Jumpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kouno, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Akihiro Imamoto, Tomoko Araya, Hayato Konno, Takuya Okanaga, Tomofumi Fujimura, Xiaoqing Wang, Mai Muramoto, Masahiro Kamoshida, Masatoshi Kohno, Yoshinao Suzuki, Tomoharu Hashiguchi, Tsukasa Kobayashi, Masashi Yamaoka, Ryuji Yamashita:
https://www.toshiba.co.jp/tech/review/2011/09/66_09pdf/a04.pdf ISSCC 2011 : "A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology. " Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Jumpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai, Osamu Nagao, Junji Musha, Takatoshi Minamoto, Kosuke Yanagidaira, Yuya Suzuki, Dai Nakamura, Yoshikazu Hosomura, Hiromitsu Komai, Yuka Furuta, Mai Muramoto, Rieko Tanaka, Go Shikata, Ayako Yuminaka, Kiyofumi Sakurai, Manabu Sakai, Hong Ding, Mitsuyuki Watanabe, Yosuke Kato, Toru Miwa, Alex Mak, Masaru Nakamichi, Gertjan Hemink, Dana Lee, Masaaki Higashitani, Brian Murphy, Bo Lei, Yasuhiko Matsunaga, Kiyomi Naruke, Takahiko Hara: ISSCC 2009 : "A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS. " Cuong Trinh, Noboru Shibata, Takeshi Nakano, Mikio Ogawa, Jumpei Sato, Yoshikazu Takeyama, Katsuaki Isobe, Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei, Kiyoaki Iwasa, J. Nakai, Takahiro Shimizu, Mitsuaki Honma, Shintaro Sakai, Toshimasa Kawaai, Satoru Hoshi, Jonghak Yuh, Cynthia Hsu, Taiyuan Tseng, Jason Li, Jayson Hu, M. Liu, Shahzad Khalid, J. Chen, Mitsuyuki Watanabe, Hung-Szu Lin, Junhui Yang, K. McKay, Khanh Nguyen, Tuan Pham, Y. Matsuda, K. Nakamura, K. Kanebako, S. Yoshikawa, W. Igarashi, A. Inoue, T. Takahashi, Y. Komatsu, C. Suzuki, K. Kanazawa, Masaaki Higashitani, Seungpil Lee, T. Murai, K. Nguyen, James Lan, Sharon Huynh, M. Murin, M. Shlick, M. Lasser, Raul Cernea, Mehrdad Mofidi, K. Schuegraf, Khandker Quader
Testing embedded DRAM ASIC products.