Jon-L Innocent-Dolor

Chemical Engineer skilled at solving challenging problems in Reactive-Ion Etching

New York, New York, United States

About

I am a creative thinker who is excited to apply my technical and interpersonal skills in order to bring value to a team of like-minded peers while solving important engineering problems. By combining my knowledge of chemical engineering principles with my rich background in materials science - I contribute to the development of practical and economically viable solutions to challenging industrial problems. I was presented with the Allen J Barduhn Award by Syracuse University for my academic excellence and commitment to service in the chemical engineering industry. I developed critical time management skills while being a member of a varsity college and national swim team and maintaining my stellar academic performance. When I’m not crunching numbers -to get in touch with my creative side, I enjoy playing the piano, dancing, and creating visual art.

Experience

  • Process Engineer at Tokyo Electron US
    Sep 2019 - Present · 6 yrs 11 mos

  • Process Engineer at IBM
    Apr 2018 - Sep 2019 · 1 yr 6 mos

    • Collect and monitor tool data to ensure dry etch processes remain within defined specifications • Collaborate with Research Staff Members to develop new and improve existing dry etch processes • Train new tool operators; fully versed on three unique multi-chamber platforms which encompass five discrete etch tools

  • Intern at National Institute for Materials Science
    May 2015 - Aug 2015 · 4 mos

    • Increased thermoelectric performance of boron carbide by 6 % by synthesizing and optimizing novel composite material • Developed a method for improving uniformity of composite nanopowder mixture

  • Materials Research Institute Intern at Penn State University
    May 2014 - Aug 2014 · 4 mos

    • Created a chlorine-based plasma etch recipe to produce patterned fused quartz substrates with low surface roughness • Improved silicon thin film characteristics by reducing defects through alignment of grain boundaries with substrate pattern