Tempe, Arizona, United States
Dedicated electrophysics / electrical / biosensor engineer specializing in the development of multi-discipline Nano, Photonics, Micro and Bio-technologies. Background includes over 30 years’ experience in research, development and fabrication of IC based Si, III-V and Photonics integrated circuits, power semiconductors, MEMS, SiC, Graphene, transparent electrode, nano-sensor devices and multi-chip packaging (module). Expertise are in scientific research, managing projects, developing products including developing and improving MEMS, semiconductor and photonic processes, project management, defect minimization, yield improvement, flip-chip technology, multi-chip module fabrication for different applications, power-semiconductor device fabrication, no-wire bonds power semiconductor packaging and multi-biomedical sensors for screening specific antigens and gases. Well motivated to achieve timeliness goals and capitalize on rapid market changes.
* Work on designing fabrication and packaging of different types of Si, SiC, GaN, GaAS devices - Si Photonics * Leading the development and commercialization of high power, radiation-tolerant, extreme environment (1.2-20KV) SiC Diodes, MOSFETs and IGBTs devices – GaAs high power lasers - GaN solar blind photo detectors.
Worked on the development of GaAs high power single surface emitting lasers using photonic crystal and grating based coupling approach between multiple surface emitting devices using optical and Electron Beam lithography; Participating in developing sub-processes, experimentation with several tools and techniques including CVD, PVD, ALD, ICP, Wet Etching equipment; Operating different metrology, test, and backend tools.
Fabrication supervision, technical support, troubleshooting; Collaboration with company’s technical team to review fabrication issues, test results and potential wafer fabrication improvements; Design process flows, integration schemes, sub-processes, recipes, packaging for a double-sided semiconductor power switch called the Bi-directional Bipolar Junction Transistor (B-TRAN™).
* Lead the device related technology and issues for SiCamore and our customers, help design process flows, integration schemes, processes and recipes, and other related issues such as packaging and test. * Develop and fabricate 600V - 20kV SiC power devices (such as JBSFETs, MOSFETs, Diodes, n-IGBTs), Double-sided Silicon IC processes, 3kV - 7kV SGTO devices. * Collaborate with universities on the development and fabrication of Silicon, GaAs and GaN photonic devices. * Work with Sales and Marketing to produce materials, engage customers, develop business and supporting customer success with SiCamore. Create and define technology roadmaps for the company and give technical presentations at conferences and trade shows.
* Work on designing, process development, layout, fabrication, testing and packaging of III-V devices such as HBTs, Linear pHEMTs, Threshold Control HEMTs for the 5G industry; Si devices such as PIN and Super Thin PIN diodes. * Highly involve in the design, layout and construction of a new III-V manufacturing facility in the Far East capable of processing 20,000 GaAs wafers per month. Additional tasks include selecting, purchasing and participating in the installments of more than 108 tools needed for fabricating the devices. * Responsible for designing and running experiments to qualify every single unit process tool before installment in the fab., identifying all probable high-risk processes and running experiments to eliminate them to guaranty first pass success of the lots that will be run first in the new facility.