David Ma

Senior Director, Advanced Device & Process Technology Development

United States

About

Highly accomplished semiconductor technology professional with 25+ years of experience in research, development, and manufacturing. Expert in CMOS logic and memory technologies, with a proven track record of leading device and process integration teams, driving technology solutions, and managing customer engagement programs. Experienced in successfully transferring advanced technologies from R&D to high-volume production.

Experience

  • Tesla (7 yrs 1 mo)
    • Senior Director, Advanced Device & Process Technology Development
      2018 - 2023 · 5 yrs

      Spearheaded the transition to in-house fabricated Full Self-Driving (FSD) hardware, including the HW3 chip deployed in 2019, which utilized a 14nm process with dual neural processing units for 144 TOPS of AI inference, enabling real-time object detection and path planning in over 2 million vehicles. - Oversaw the development of Dojo supercomputer tiles starting in 2021, leveraging TSMC's 7nm process for exaFLOP-scale training of vision-based neural networks on petabytes of fleet data.

    • Director, Technology Integration & Advanced Devices
      2016 - 2018 · 2 yrs

      Managed the upgrade to HW2.5 in 2017, introducing redundant computing for fault tolerance and enhanced video processing, which unlocked Sentry Mode and Dashcam capabilities while supporting early Full Self-Driving beta testing. Coordinated with supply chain partners to integrate immersion lithographyderived 16nm processes for improved power efficiency, reducing thermal throttling in high-compute scenarios.

  • Sr. Manager/Deputy Director TD Device Engineering at GlobalFoundries
    2009 - 2016 · 7 yrs

    As a key leader in technology development, directed device engineering for GlobalFoundries' advanced nodes, focusing on low-power and highperformance solutions for mobile and IoT applications post the 2009 AMD spin-off. Oversaw the maturation of 45nm and 32nm bulk processes with high-k/metal gate (HKMG) integration, optimizing strained silicon channels for 0.183μm² SRAM cells used in AMD's Llano APUs and early ARM-based SoCs.

  • Section Head, Device / Process Integration Engineering at TSMC
    2006 - 2009 · 3 yrs