Adrian Finney

Lead Principle Engineer at Infineon Technologies

Austria

About

I enjoy challenging technical work particularly if I can apply both my Semiconductor Technology and Circuit knowledge. I am experienced in both Technology and Product development using TCAD Process, Device and Mixed Mode Simulation, as well as Cadence Analog Circuit Design, and have multiple patents in both Technology areas. Native English Speaker with excellent German and French.

Experience

  • Lead Principle Engineer at Infineon Technologies

  • IntelliFET Technical Lead at Diodes Incorporated

    Lead IntelliFET Design Engineer (protected vertical low side power MOSFET with integrated monolithic control circuit). I carried out all aspects of Techology Development and Product Development through two generations of Technology and submitted numerous patents. I largely defined the products through frequent customer visits, I deriving the Process Flow and Device Library using Silvaco TCAD Process and Device Simulation, and I also designed the products using Cadence Virtuoso Spectre for Analog Circuit Design and Cadence Virtuoso Layout. Before working on IntelliFETs, I demonstrated proof of concept of a novel trench MOS concept (ISPSD 2001) which is now in production.

  • Design Engineer at ON Semiconductor

    Product Designer for the Lighting Group and member of the Technical Ladder. Products I designed included 600V IGBTs with monolithic integrated reverse diode, high voltage H2BIP bipolars with integrated network to prevent deep saturation for storage time control, and power MOSFETs with monolithically integrated drive circuitry. My role included circuit design and layout, TCAD Medici Device simulation, trial specification and analysis, customer visits, and production support.

  • Senior Staff Engineer at Infineon Technologies

    Automotive Technology Development Lead Engineer for SPS Products. This is a new generation of cost optimised protected MOSFETs (HITFETs). I conceived and developed the original concept combining a low Ron planar vertical DMOS using charge compensation principles with CMOS control circuitry to exactly meet the application requirements. Working in Technology Development, I use TCAD Process and Device Simulation extensively, and the novel aspects of this work resulted in numerous patents. This technology platform entered production in 2014 and now supports a wide product family. I'm currently working on a follow on motor control platform.

  • Principle Engineer at Infineon Technologies

    Synopsis TCAD simulation of state of the art power MOSFETs such as SFET8. Concept and Simulation of new power switching concepts